SI2303BDS-T1-E3
Part NoSI2303BDS-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 30V 1.49A SOT23-3
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C1.49A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)200mOhm @ 1.7A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs10 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)180 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature700mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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20819
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