SI2304BDS-T1-GE3
Part NoSI2304BDS-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 2.6A SOT23-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C2.6A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)70mOhm @ 2.5A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs4 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)225 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature750mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
24380
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.391 | |
| 10 | 0.3832 | |
| 100 | 0.3715 | |
| 1000 | 0.3597 | |
| 10000 | 0.3441 |
Associated Product
