SI2306BDS-T1-E3
Part NoSI2306BDS-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 3.16A SOT23-3
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C3.16A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)47mOhm @ 3.5A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs4.5 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)305 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature750mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
47152
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.678 | |
10 | 0.6644 | |
100 | 0.6441 | |
1000 | 0.6238 | |
10000 | 0.5966 |