SI2307BDS-T1-GE3
Part NoSI2307BDS-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 30V 2.5A SOT23-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C2.5A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)78mOhm @ 3.2A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs15 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)380 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature750mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
18619
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4731 | |
| 10 | 0.4636 | |
| 100 | 0.4494 | |
| 1000 | 0.4353 | |
| 10000 | 0.4163 |
Associated Product
