SI2312BDS-T1-BE3
Part NoSI2312BDS-T1-BE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 20-V (D-S) MOSFET
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C3.9A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)31mOhm @ 5A, 4.5V
RdsOn(Max)@Id850mV @ 250µA
Vgs12 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature750mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
25050
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.44 | |
| 10 | 0.4312 | |
| 100 | 0.418 | |
| 1000 | 0.4048 | |
| 10000 | 0.3872 |
Associated Product
