SI2316BDS-T1-BE3
Part NoSI2316BDS-T1-BE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 30-V (D-S) MOSFET
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C3.9A (Ta), 4.5A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)50mOhm @ 3.9A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs9.6 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)350 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.25W (Ta), 1.66W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4831
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.6213 | |
10 | 0.6089 | |
100 | 0.5902 | |
1000 | 0.5716 | |
10000 | 0.5467 |