SI2327DS-T1-GE3
Part NoSI2327DS-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 200V 380MA SOT23-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C380mA (Ta)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)2.35Ohm @ 500mA, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs12 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)510 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature750mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
12332
Pricing
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Associated Product
