SI2329DS-T1-GE3
Part NoSI2329DS-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 8V 6A SOT23-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)8 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn1.2V, 4.5V
MinRdsOn)30mOhm @ 5.3A, 4.5V
RdsOn(Max)@Id800mV @ 250µA
Vgs29 nC @ 4.5 V
Vgs(th)(Max)@Id±5V
Vgs(Max)1485 pF @ 4 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
22191
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5244 | |
| 10 | 0.5139 | |
| 100 | 0.4982 | |
| 1000 | 0.4824 | |
| 10000 | 0.4615 |
Associated Product
