SI2331DS-T1-E3
Part NoSI2331DS-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 12V 3.2A SOT23-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C3.2A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)48mOhm @ 3.6A, 4.5V
RdsOn(Max)@Id900mV @ 250µA
Vgs14 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)780 pF @ 6 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature710mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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10193
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Associated Product
