SI2335DS-T1-E3
Part NoSI2335DS-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 12V 3.2A SOT23-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C3.2A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)51mOhm @ 4A, 4.5V
RdsOn(Max)@Id450mV @ 250µA (Min)
Vgs±8V
Vgs(th)(Max)@Id1225 pF @ 6 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds750mW (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureSOT-23-3 (TO-236)
MountingTypeTO-236-3, SC-59, SOT-23-3
SupplierDevicePackage15 nC @ 4.5 V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
14534
Pricing
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Associated Product
