SI2338DS-T1-GE3
Part NoSI2338DS-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 6A SOT23
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)28mOhm @ 5.5A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs13 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)424 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.3W (Ta), 2.5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17530
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5559 | |
| 10 | 0.5448 | |
| 100 | 0.5281 | |
| 1000 | 0.5114 | |
| 10000 | 0.4892 |
Associated Product
