SI2342DS-T1-GE3
Part NoSI2342DS-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 8V 6A SOT-23
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)8 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn17mOhm @ 7.2A, 4.5V
MinRdsOn)800mV @ 250µA
RdsOn(Max)@Id15.8 nC @ 4.5 V
Vgs±5V
Vgs(th)(Max)@Id1070 pF @ 4 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2.5W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureSOT-23-3 (TO-236)
MountingTypeTO-236-3, SC-59, SOT-23-3
SupplierDevicePackage1.2V, 4.5V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
21513
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5733 | |
| 10 | 0.5618 | |
| 100 | 0.5446 | |
| 1000 | 0.5274 | |
| 10000 | 0.5045 |
Associated Product
