SI2351DS-T1-E3
RoHS

SI2351DS-T1-E3

Part NoSI2351DS-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 2.8A SOT23-3
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ECAD Module SI2351DS-T1-E3
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Specification
PackageCut Tape (CT),Digi-Reel®
Series-
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C2.8A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)115mOhm @ 2.4A, 4.5V
RdsOn(Max)@Id1.5V @ 250µA
Vgs5.1 nC @ 5 V
Vgs(th)(Max)@Id-
Vgs(Max)250 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 14805
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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