SI2365EDS-T1-GE3
Part NoSI2365EDS-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 5.9A TO236
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C5.9A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)32mOhm @ 4A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs36 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Ta), 1.7W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
20401
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.3198 | |
| 10 | 0.3134 | |
| 100 | 0.3038 | |
| 1000 | 0.2942 | |
| 10000 | 0.2814 |
Associated Product
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