SI2369BDS-T1-GE3
Part NoSI2369BDS-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 30V 5.6A/7.5A SOT23
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C5.6A (Ta), 7.5A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)27mOhm @ 5A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs19.5 nC @ 10 V
Vgs(th)(Max)@Id+16V, -20V
Vgs(Max)745 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.3W (Ta), 2.5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9615
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6069 | |
| 10 | 0.5948 | |
| 100 | 0.5766 | |
| 1000 | 0.5583 | |
| 10000 | 0.5341 |
Associated Product
