SI2399DS-T1-BE3
RoHS

SI2399DS-T1-BE3

Part NoSI2399DS-T1-BE3
ManufacturerVishay Siliconix
DescriptionP-CHANNEL 20-V (D-S) MOSFET
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ECAD Module SI2399DS-T1-BE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C5.1A (Ta), 6A (Tc)
DriveVoltage(MaxRdsOn34mOhm @ 5.1A, 10V
MinRdsOn)1.5V @ 250µA
RdsOn(Max)@Id20 nC @ 4.5 V
Vgs±12V
Vgs(th)(Max)@Id835 pF @ 10 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1.25W (Ta), 2.5W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureSOT-23-3 (TO-236)
MountingTypeTO-236-3, SC-59, SOT-23-3
SupplierDevicePackage2.5V, 10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 24060
Pricing
QTY UNIT PRICE EXT PRICE
1 0.5145
10 0.5042
100 0.4888
1000 0.4733
10000 0.4528
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product