SI3424BDV-T1-GE3
RoHS

SI3424BDV-T1-GE3

Part NoSI3424BDV-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 8A 6TSOP
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ECAD Module SI3424BDV-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C8A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)28mOhm @ 7A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs19.6 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)735 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.1W (Ta), 2.98W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-TSOP
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 16882
Pricing
QTY UNIT PRICE EXT PRICE
1 0.522
10 0.5116
100 0.4959
1000 0.4802
10000 0.4594
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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