SI3429EDV-T1-GE3
RoHS

SI3429EDV-T1-GE3

Part NoSI3429EDV-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 8A/8A 6TSOP
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ECAD Module SI3429EDV-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C8A (Ta), 8A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)21mOhm @ 4A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs118 nC @ 10 V
Vgs(th)(Max)@Id±8V
Vgs(Max)4085 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature4.2W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-TSOP
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 15964
Pricing
QTY UNIT PRICE EXT PRICE
1 0.468
10 0.4586
100 0.4446
1000 0.4306
10000 0.4118
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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