SI3430DV-T1-GE3
Part NoSI3430DV-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 1.8A 6TSOP
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C1.8A (Ta)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)170mOhm @ 2.4A, 10V
RdsOn(Max)@Id2V @ 250µA (Min)
Vgs6.6 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.14W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-6 Thin, TSOT-23-6
SupplierDevicePackage6-TSOP
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
37949
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.416 | |
| 10 | 1.3877 | |
| 100 | 1.3452 | |
| 1000 | 1.3027 | |
| 10000 | 1.2461 |
Associated Product
