SI3443BDV-T1-GE3
RoHS

SI3443BDV-T1-GE3

Part NoSI3443BDV-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 3.6A 6TSOP
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ECAD Module SI3443BDV-T1-GE3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C3.6A (Ta)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)60mOhm @ 4.7A, 4.5V
RdsOn(Max)@Id1.4V @ 250µA
Vgs9 nC @ 4.5 V
Vgs(th)(Max)@Id±12V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.1W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-TSOP
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 10721
Pricing
QTY UNIT PRICE EXT PRICE
1 0.2808
10 0.2752
100 0.2668
1000 0.2583
10000 0.2471
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product