SI3447BDV-T1-GE3
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SI3447BDV-T1-GE3

Part NoSI3447BDV-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 12V 4.5A 6TSOP
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ECAD Module SI3447BDV-T1-GE3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C4.5A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)40mOhm @ 6A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs14 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.1W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-TSOP
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 5282
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product