SI3457BDV-T1-GE3
RoHS

SI3457BDV-T1-GE3

Part NoSI3457BDV-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 30V 3.7A 6TSOP
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ECAD Module SI3457BDV-T1-GE3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C3.7A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)54mOhm @ 5A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs19 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.14W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-TSOP
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 9532
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Shipping Information
Shiped FromShenZhen Warehourse
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