SI3460BDV-T1-GE3
Part NoSI3460BDV-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V 8A 6TSOP
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C8A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)27mOhm @ 5.1A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs24 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)860 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2W (Ta), 3.5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-TSOP
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
13811
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8091 | |
| 10 | 0.7929 | |
| 100 | 0.7686 | |
| 1000 | 0.7444 | |
| 10000 | 0.712 |
Associated Product
