SI3499DV-T1-GE3
Part NoSI3499DV-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 8V 5.3A 6TSOP
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)8 V
Current-ContinuousDrain(Id)@25°C5.3A (Ta)
DriveVoltage(MaxRdsOn1.5V, 4.5V
MinRdsOn)23mOhm @ 7A, 4.5V
RdsOn(Max)@Id750mV @ 250µA
Vgs42 nC @ 4.5 V
Vgs(th)(Max)@Id±5V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.1W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/Case6-TSOP
GateCharge(Qg)(Max)@VgsSOT-23-6 Thin, TSOT-23-6
Grade
Qualification
In Stock:
14346
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0476 | |
| 10 | 1.0266 | |
| 100 | 0.9952 | |
| 1000 | 0.9638 | |
| 10000 | 0.9219 |
Associated Product
