SI3590DV-T1-E3
RoHS

SI3590DV-T1-E3

Part NoSI3590DV-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N/P-CH 30V 2.5A 6TSOP
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ECAD Module SI3590DV-T1-E3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)30V
Current-ContinuousDrain(Id)@25°C2.5A, 1.7A
RdsOn(Max)@Id77mOhm @ 3A, 4.5V
Vgs1.5V @ 250µA
Vgs(th)(Max)@Id4.5nC @ 4.5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds830mW
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-6 Thin, TSOT-23-6
Package/Case6-TSOP
SupplierDevicePackage-
Grade-
Qualification
In Stock: 17496
Pricing
QTY UNIT PRICE EXT PRICE
1 0.8395
10 0.8227
100 0.7975
1000 0.7723
10000 0.7388
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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