SI3812DV-T1-GE3
Part NoSI3812DV-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V 2A 6TSOP
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesLITTLE FOOT®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C2A (Ta)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)125mOhm @ 2.4A, 4.5V
RdsOn(Max)@Id600mV @ 250µA (Min)
Vgs4 nC @ 4.5 V
Vgs(th)(Max)@Id±12V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@VdsSchottky Diode (Isolated)
FETFeature830mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-TSOP
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9142
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Associated Product
