SI3900DV-T1-GE3
Part NoSI3900DV-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 20V 2A 6TSOP
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C2A
RdsOn(Max)@Id125mOhm @ 2.4A, 4.5V
Vgs1.5V @ 250µA
Vgs(th)(Max)@Id4nC @ 4.5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds830mW
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-6 Thin, TSOT-23-6
Package/Case6-TSOP
SupplierDevicePackage-
Grade-
Qualification
In Stock:
17140
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7533 | |
| 10 | 0.7382 | |
| 100 | 0.7156 | |
| 1000 | 0.693 | |
| 10000 | 0.6629 |
Associated Product
