SI4010DY-T1-GE3
RoHS

SI4010DY-T1-GE3

Part NoSI4010DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CHANNEL 30V 31.3A 8SO
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ECAD Module SI4010DY-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT)
SeriesTrenchFET®
ProductStatusObsolete
FETType31.3A (Tc)
TechnologySurface Mount
DraintoSourceVoltage(Vdss)8-SOIC
Current-ContinuousDrain(Id)@25°C8-SOIC (0.154, 3.90mm Width)
DriveVoltage(MaxRdsOnN-Channel
MinRdsOn)MOSFET (Metal Oxide)
RdsOn(Max)@Id30 V
Vgs4.5V, 10V
Vgs(th)(Max)@Id3.4mOhm @ 15A, 10V
Vgs(Max)2.3V @ 250µA
InputCapacitance(Ciss)(Max)@Vds77 nC @ 10 V
FETFeature+20V, -16V
PowerDissipation(Max)3595 pF @ 15 V
OperatingTemperature-
MountingType6W (Tc)
SupplierDevicePackage-55°C ~ 150°C (TA)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 9829
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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