SI4100DY-T1-GE3
Part NoSI4100DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 6.8A 8SO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C6.8A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)63mOhm @ 4.4A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id600 pF @ 50 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2.5W (Ta), 6W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature8-SOIC
MountingType8-SOIC (0.154, 3.90mm Width)
SupplierDevicePackage20 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
19942
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.2446 | |
| 10 | 1.2197 | |
| 100 | 1.1824 | |
| 1000 | 1.145 | |
| 10000 | 1.0952 |
Associated Product
