SI4104DY-T1-E3
RoHS

SI4104DY-T1-E3

Part NoSI4104DY-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 4.6A 8SO
Datasheet Download Now!
ECAD Module SI4104DY-T1-E3
Get Quotation Now!
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C4.6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)105mOhm @ 5A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs13 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)446 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta), 5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 12149
Pricing
QTY UNIT PRICE EXT PRICE
1Get latest price!-
10Get latest price!-
100Get latest price!-
1000Get latest price!-
10000Get latest price!-
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
BSZ097N04LSGATMA1
BSZ097N04LSGATMA1
Infineon
MOSFET N-CH 40V 12A/40A 8TSDSON
IRF135SA204
IRF135SA204
Infineon
MOSFET N-CH 135V 160A D2PAK-7
IRFR13N20DTR
IRFR13N20DTR
Infineon
MOSFET N-CH 200V 13A DPAK
BLF1721M8LS200U
BLF1721M8LS200U
Ampleon
RF MOSFET LDMOS 28V SOT502B
FDB3682
FDB3682
onsemi
MOSFET N-CH 100V 6A/32A TO263
DMC1229UFDB-13
DMC1229UFDB-13
Diodes Inc.
MOSFET N/P-CH 12V 5.6A 6UDFN
IPD60R380C6
IPD60R380C6
Infineon
MOSFET N-CH 600V 10.6A TO252-3
SIHFU024-GE3
SIHFU024-GE3
Vishay Siliconix
LOGIC MOSFET N-CHANNEL 60V