SI4155DY-T1-GE3
Part NoSI4155DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionP-CHANNEL 30-V (D-S) MOSFET SO-8
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C10.2A (Ta), 13.6A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)15mOhm @ 7A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs50 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)1870 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta), 4.5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/Case8-SOIC
GateCharge(Qg)(Max)@Vgs8-SOIC (0.154, 3.90mm Width)
Grade
Qualification
In Stock:
10024
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8112 | |
| 10 | 0.795 | |
| 100 | 0.7706 | |
| 1000 | 0.7463 | |
| 10000 | 0.7139 |
Associated Product
