SI4162DY-T1-GE3
Part NoSI4162DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 19.3A 8SO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C19.3A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)7.9mOhm @ 20A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs30 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1155 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta), 5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
23632
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7644 | |
| 10 | 0.7491 | |
| 100 | 0.7262 | |
| 1000 | 0.7032 | |
| 10000 | 0.6727 |
Associated Product
