SI4178DY-T1-E3
Part NoSI4178DY-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 12A 8SO
Datasheet
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)21mOhm @ 8.4A, 10V
RdsOn(Max)@Id2.8V @ 250µA
Vgs12 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)405 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.4W (Ta), 5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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