SI4196DY-T1-GE3
Part NoSI4196DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V 8A 8SO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C8A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)27mOhm @ 8A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs22 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)830 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2W (Ta), 4.6W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
11098
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Associated Product
