SI4200DY-T1-GE3
Part NoSI4200DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 25V 8A 8SOIC
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)25V
Current-ContinuousDrain(Id)@25°C8A
RdsOn(Max)@Id25mOhm @ 7.3A, 10V
Vgs2.2V @ 250µA
Vgs(th)(Max)@Id12nC @ 10V
GateCharge(Qg)(Max)@Vgs415pF @ 13V
InputCapacitance(Ciss)(Max)@Vds2.8W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC (0.154, 3.90mm Width)
Package/Case8-SOIC
SupplierDevicePackage-
Grade-
Qualification
In Stock:
5393
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Associated Product
