SI4425BDY-T1-GE3
RoHS

SI4425BDY-T1-GE3

Part NoSI4425BDY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 30V 8.8A 8SO
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ECAD Module SI4425BDY-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C8.8A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)12mOhm @ 11.4A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs100 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.5W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 13431
Pricing
QTY UNIT PRICE EXT PRICE
1 1.7108
10 1.6766
100 1.6253
1000 1.5739
10000 1.5055
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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