SI4448DY-T1-GE3
Part NoSI4448DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 12V 50A 8SO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C50A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)1.7mOhm @ 20A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs150 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds3.5W (Ta), 7.8W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature8-SOIC
MountingType8-SOIC (0.154, 3.90mm Width)
SupplierDevicePackage12350 pF @ 6 V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
6011
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Associated Product
