SI4459BDY-T1-GE3
RoHS

SI4459BDY-T1-GE3

Part NoSI4459BDY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 30V 20.5A/27.8A 8SO
Datasheet Download Now!
ECAD Module SI4459BDY-T1-GE3
Get Quotation Now!
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C20.5A (Ta), 27.8A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)4.9mOhm @ 15A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs+20V, -16V
Vgs(th)(Max)@Id3490 pF @ 15 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds3.1W (Ta), 5.6W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature8-SO
MountingType8-SOIC (0.154, 3.90mm Width)
SupplierDevicePackage84 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 5135
Pricing
QTY UNIT PRICE EXT PRICE
1 1.2656
10 1.2403
100 1.2023
1000 1.1644
10000 1.1137
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
STB10N60M2
STB10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A D2PAK
IRFH8202TRPBF
IRFH8202TRPBF
Infineon
MOSFET N-CH 25V 47A/100A 8PQFN
QS8K51TR
QS8K51TR
ROHM
MOSFET 2N-CH 30V 2A TSMT8
IRL610A
IRL610A
onsemi
MOSFET N-CH 200V 3.3A TO220-3
2SK3546J0L
2SK3546J0L
Panasonic
MOSFET N-CH 50V 100MA SSMINI3-F1
IPB80N06S4L07ATMA1
IPB80N06S4L07ATMA1
Infineon
MOSFET N-CH 60V 80A TO263-3
MSC080SMA120SDT/R
MSC080SMA120SDT/R
Microchip Technology
MOSFET SIC 1200 V 80 MOHM TO-263