SI4477DY-T1-GE3
Part NoSI4477DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 26.6A 8SO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C26.6A (Tc)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)6.2mOhm @ 18A, 4.5V
RdsOn(Max)@Id1.5V @ 250µA
Vgs190 nC @ 10 V
Vgs(th)(Max)@Id±12V
Vgs(Max)4600 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3W (Ta), 6.6W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
21417
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.302 | |
| 10 | 1.276 | |
| 100 | 1.2369 | |
| 1000 | 1.1978 | |
| 10000 | 1.1458 |
Associated Product
