SI4487DY-T1-GE3
Part NoSI4487DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 30V 11.6A 8SO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C11.6A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)20.5mOhm @ 10A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs36 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2.5W (Ta), 5W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature8-SOIC
MountingType8-SOIC (0.154, 3.90mm Width)
SupplierDevicePackage1075 pF @ 15 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
11894
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Associated Product
