SI4511DY-T1-E3
RoHS

SI4511DY-T1-E3

Part NoSI4511DY-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N/P-CH 20V 7.2A 8-SOIC
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ECAD Module SI4511DY-T1-E3
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Specification
PackageCut Tape (CT),Digi-Reel®
Series-
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C7.2A, 4.6A
RdsOn(Max)@Id14.5mOhm @ 9.6A, 10V
Vgs1.8V @ 250µA
Vgs(th)(Max)@Id18nC @ 4.5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds1.1W
Power-Max-
OperatingTemperatureSurface Mount
MountingType8-SOIC (0.154, 3.90mm Width)
Package/Case8-SOIC
SupplierDevicePackage
Grade
Qualification
In Stock: 18433
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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