SI4660DY-T1-GE3
Part NoSI4660DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 25V 23.1A 8SO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)25 V
Current-ContinuousDrain(Id)@25°C23.1A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)5.8mOhm @ 15A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs45 nC @ 10 V
Vgs(th)(Max)@Id±16V
Vgs(Max)2410 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.1W (Ta), 5.6W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
8565
Pricing
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Associated Product
