SI4668DY-T1-GE3
Part NoSI4668DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 25V 16.2A 8SO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)25 V
Current-ContinuousDrain(Id)@25°C16.2A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)10.5mOhm @ 15A, 10V
RdsOn(Max)@Id2.6V @ 250µA
Vgs42 nC @ 10 V
Vgs(th)(Max)@Id±16V
Vgs(Max)1654 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta), 5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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available for immediate sale in a store
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Associated Product
