SI4670DY-T1-GE3
Part NoSI4670DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 25V 8A 8SOIC
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)25V
Current-ContinuousDrain(Id)@25°C8A
RdsOn(Max)@Id23mOhm @ 7A, 10V
Vgs2.2V @ 250µA
Vgs(th)(Max)@Id18nC @ 10V
GateCharge(Qg)(Max)@Vgs680pF @ 13V
InputCapacitance(Ciss)(Max)@Vds2.8W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC (0.154, 3.90mm Width)
Package/Case8-SOIC
SupplierDevicePackage-
Grade-
Qualification
In Stock:
12377
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5593 | |
| 10 | 0.5481 | |
| 100 | 0.5313 | |
| 1000 | 0.5146 | |
| 10000 | 0.4922 |
Associated Product
