SI4712DY-T1-GE3
Part NoSI4712DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 14.6A 8SO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesSkyFET®, TrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C14.6A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)13mOhm @ 15A, 10V
RdsOn(Max)@Id2.5V @ 1mA
Vgs28 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1084 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta), 5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
13178
Pricing
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Associated Product
