SI4823DY-T1-GE3
RoHS

SI4823DY-T1-GE3

Part NoSI4823DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 4.1A 8SO
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ECAD Module SI4823DY-T1-GE3
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Specification
PackageTape & Reel (TR)
SeriesLITTLE FOOT®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C4.1A (Tc)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)108mOhm @ 3.3A, 4.5V
RdsOn(Max)@Id1.5V @ 250µA
Vgs12 nC @ 10 V
Vgs(th)(Max)@Id±12V
Vgs(Max)Schottky Diode (Isolated)
InputCapacitance(Ciss)(Max)@Vds1.7W (Ta), 2.8W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature8-SOIC
MountingType8-SOIC (0.154, 3.90mm Width)
SupplierDevicePackage660 pF @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 11180
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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