SI4876DY-T1-GE3
RoHS

SI4876DY-T1-GE3

Part NoSI4876DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V 14A 8SO
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ECAD Module SI4876DY-T1-GE3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C14A (Ta)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)5mOhm @ 21A, 4.5V
RdsOn(Max)@Id600mV @ 250µA (Min)
Vgs80 nC @ 4.5 V
Vgs(th)(Max)@Id±12V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1.6W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature8-SOIC
MountingType8-SOIC (0.154, 3.90mm Width)
SupplierDevicePackage-
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 7643
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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