SI4896DY-T1-GE3
Part NoSI4896DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 80V 6.7A 8SO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)80 V
Current-ContinuousDrain(Id)@25°C6.7A (Ta)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)16.5mOhm @ 10A, 10V
RdsOn(Max)@Id2V @ 250µA (Min)
Vgs41 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.56W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14370
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.1692 | |
| 10 | 2.1258 | |
| 100 | 2.0607 | |
| 1000 | 1.9957 | |
| 10000 | 1.9089 |
Associated Product
