SI4900DY-T1-GE3
Part NoSI4900DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 60V 5.3A 8SOIC
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)60V
Current-ContinuousDrain(Id)@25°C5.3A
RdsOn(Max)@Id58mOhm @ 4.3A, 10V
Vgs3V @ 250µA
Vgs(th)(Max)@Id20nC @ 10V
GateCharge(Qg)(Max)@Vgs665pF @ 15V
InputCapacitance(Ciss)(Max)@Vds3.1W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC (0.154, 3.90mm Width)
Package/Case8-SOIC
SupplierDevicePackage-
Grade-
Qualification
In Stock:
7147
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.344 | |
| 10 | 1.3171 | |
| 100 | 1.2768 | |
| 1000 | 1.2365 | |
| 10000 | 1.1827 |
Associated Product
