SI4922BDY-T1-GE3
RoHS

SI4922BDY-T1-GE3

Part NoSI4922BDY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 30V 8A 8SOIC
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ECAD Module SI4922BDY-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeature-
DraintoSourceVoltage(Vdss)30V
Current-ContinuousDrain(Id)@25°C8A
RdsOn(Max)@Id16mOhm @ 5A, 10V
Vgs1.8V @ 250µA
Vgs(th)(Max)@Id62nC @ 10V
GateCharge(Qg)(Max)@Vgs2070pF @ 15V
InputCapacitance(Ciss)(Max)@Vds3.1W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC (0.154, 3.90mm Width)
Package/Case8-SOIC
SupplierDevicePackage-
Grade-
Qualification
In Stock: 11146
Pricing
QTY UNIT PRICE EXT PRICE
1 1.6116
10 1.5794
100 1.531
1000 1.4827
10000 1.4182
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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